NPTB00025 NPTB00025 page 1 features ? optimized for broadband operation from dc - 4000mhz ? 25w p 3db cw narrowband power ? 10w p 3db cw broadband power from 500-1000mhz ? characterized for operation up to 32v ? 100% rf tested ? thermally enhanced industry standard package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to ear99 export control gallium nitride 28v, 25w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology broadband 25 watt, 28 volt gan hemt rf specifcations (cw): v ds = 28v, i dq = 225ma, frequency = 3000mhz, t c = 25c, measured in nitronex test fixture symbol parameter min typ max units p 3db average output power at 3db gain compression 22 25 - w p 1db average output power at 1db gain compression 18 21 - w g ss small signal gain 12.5 13.5 - db h drain effciency at 3db gain compression 60 65 - % y output mismatch stress, vswr = 10:1, all phase angles, p out = p sat no performance degradation after test absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v i g gate current 40 ma p t total device power dissipation (derated above 25c) 33 w q jc thermal resistance (junction-to-case) 5.25 c/w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1a (>250v) mm machine model esd rating (per jesd22-a115) m1 (>50v) nds-006 rev. 4, april 2013
NPTB00025 NPTB00025 page 2 z s is the source impedance presented to the device. z l is the load impedance presented to the device. table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance frequency (mhz) z s (w) z l (w) 800 3.9 + j5.9 12.2 + j6.1 2000 3.7 - j5.1 7.7 - j1.1 3000 4.7 - j15.3 7.4 - j5.8 figure 1 - optimal impedances for cw performance, v ds = 28v, i dq = 225ma symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 8ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 1 5 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 8ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 225ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2.0v, i d = 60ma) - 0.44 0.55 w i d drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle, v gs = 2.0v) 4.9 5.4 - a dc specifcations: t c = 25c load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted nds-006 rev. 4, april 2013
NPTB00025 NPTB00025 page 3 figure 2 - typical cw performance, over current, frequency = 3000mhz figure 3 - typical cw performance over frequency load-pull data, reference plane at device leads v ds =28v, i dq =225ma, t a =25c unless otherwise noted. figure 4 - typical cw performance over voltage, impedances held constant, frequency = 1800mhz typical device characteristics v ds =28v, i dq =225ma, t a =25c unless otherwise noted. figure 5 - mttf of nrf1 devices as a function of junction temperature figure 6 - typical cw performance in nitronex test fixture, frequency = 3000mhz nds-006 rev. 4, april 2013
NPTB00025 NPTB00025 page 4 n p t b 0 002 0 a 035 274 r g 041 200 000 v gate v drain rf out rf in n i tro nex n p tb00020 8 / 01/ 2 006 figure 7 - NPTB00025 3000mhz test fixture NPTB00025 032574r g041200000 name value vendor part number c1 150uf nichicon upw1c151med c10 270uf united chmi-con elxy630ell271mk25s c2, c8 0.1uf kemet c1206c104k1ractu c3, c7 0.01uf avx 12061c103k at2a c4, c9 1.0 uf panasonic ecj-5yb2a105m c5, c6, c11, c12 5.6pf atc atc600f5r6ct c13 1.2pf atc atc600f1r 2at r2 49.9 ohm panasonic erj-6enf49r9v r3 0.33 ohm panasonic erj-6rqfr33v substrate - taconic rf35, t=30mil, e r =3.5 table 2: NPTB00025 3000mhz test fixture bill of materials v gs rf in v ds rf out NPTB00025, 3000mhz cw production test fixture v ds =28v, i dq =225ma, t a =25c unless otherwise noted. additional design information and data available at www.nitronex.com. tl3 281mils 424mils c12 c13 r2 tl4 265mils 441mils c6 r3 c10 + c8 c9 c7 v ds tl5 65mils 930mils rf out c11 c5 v gs rf in c4 c3 c2 tl1 65mils 345mils tl6 65mils 600mils tl7 65mils 600mils tl2 65mils 397mils c1 + NPTB00025 nds-006 rev. 4, april 2013
NPTB00025 NPTB00025 page 5 ordering information 1 part number description NPTB00025b NPTB00025 in ac200b-2 metal-ceramic bolt-down package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com figure 8 - ac200b-2 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) nds-006 rev. 4, april 2013
NPTB00025 NPTB00025 page 6 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-006 rev. 4, april 2013
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